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| inchange semiconductor product specification silicon npn power transistors 2SC2565 description ? ? with mt-200 package ? complement to type 2sa1095 ? high transition frequency applications ? for power amplifier applications pinning(see fig.2) pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25c) symbol parameter conditions value unit v cbo collector-base voltage open emitter 160 v v ceo collector-emitter voltage open base 160 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a i b base current 1.5 a p c collectorl power dissipation t c =25 ?? 150 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (mt-200) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC2565 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =0.1a; i b =0 160 v v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =5 a; i b =0.5 a 2.0 v v be base-emitter on voltage i c =5a ; v ce =5v 2.0 v i cbo collector cut-off current v cb =160v; i e =0 50 | a i ebo emitter cut-off current v eb =5v; i c =0 50 | a h fe-1 dc current gain i c =1a ; v ce =5v 55 240 h fe-2 dc current gain i c =5a ; v ce =5v 40 f t transition frequency i c =1a ; v ce =10v 80 mhz c ob output capacitance i e =0; v cb =10v;f=1mhz 200 pf ? h fe-1 classifications r o y 55-110 80-160 120-240 inchange semiconductor product specification 3 silicon npn power transistors 2SC2565 package outline fig.2 outline dimensions |
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